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  3. Samsung reportedly shifts sub-10nm DRAM roadmap toward hybrid bonding

DIGITIMES

Samsung reportedly shifts sub-10nm DRAM roadmap toward hybrid bonding

Samsung Electronics has reportedly revised the roadmap for its first sub-10nm DRAM generation, making a wafer-to-wafer hybrid-bonding architecture the baseline for its D0a process while moving its vertical-channel-transistor (VCT) design to a separate D0a-V derivative.

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24 September 2026|1 分钟阅读
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Semiconductors & Microelectronics
Samsung reportedly shifts sub-10nm DRAM roadmap toward hybrid bonding
Samsung reportedly shifts sub-10nm DRAM roadmap toward hybrid bonding
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Industry Events

全球最值得信赖的B2B活动发现平台。将行业专业人士与重要的会议、展会和峰会连接起来。

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Industry Events

全球最值得信赖的B2B活动发现平台。将行业专业人士与重要的会议、展会和峰会连接起来。

  • Industry Events
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© 2026 Industry Events Worldwide。保留所有权利。

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