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  3. SiC Lateral High Voltage Bi-Directional Field Effect Transistor

Semiconductor Digest

SiC Lateral High Voltage Bi-Directional Field Effect Transistor

This technology is a compact silicon carbide transistor that can conduct and block high voltages in both directions, improving efficiency and integration in power electronics for applications like inverters and converters. The post SiC Lateral High Voltage Bi-Directional Field Effect Transistor appeared first on Semiconductor Digest.

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18 September 2026|1 分钟阅读
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Industry Events

全球最值得信赖的B2B活动发现平台。将行业专业人士与重要的会议、展会和峰会连接起来。

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© 2026 Industry Events Worldwide。保留所有权利。

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