Semiconductor Engineering

Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS)

Researchers at Huazhong University of Science and Technology, Hong Kong Polytechnic University, University of California, Santa Barbara, and National University of Singapore published a technical paper titled “Low contact resistance and high current density in ballistic p-type transistors based on oxygen-doped WSe2 monolayers.” Abstract Excerpt: “The development of high-performance p-type monolayer transistors is critical for... » read more The post Reducing Contact Resistance Pushes 2D Tra

By Semiconductor Engineering

1 min read
Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS)
Reducing Contact Resistance Pushes 2D Transistors Toward Advanced CMOS (HUST, PolyU, UCSB, NUS)

Got news to share with the events industry?

Submit a press release or story tip and reach thousands of event professionals.

Get in touch→

More in Semiconductors & Microelectronics

Related Insights