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  3. Comparing A7 CFET and A10 Nanosheet FETs From Parasitics to Chip Reliability (TUM, UNIMORE, Applied Materials)

Semiconductor Engineering

Comparing A7 CFET and A10 Nanosheet FETs From Parasitics to Chip Reliability (TUM, UNIMORE, Applied Materials)

Researchers at the TU Munich, University of Modena and Reggio Emilia, and Applied Materials published a technical paper titled “System-Technology Co-Evaluation of A7 CFET and A10 NSFET Technologies from Cell Parasitics to Chip Reliability.” Abstract Excerpt: “ In this work, we present a physics-based thermal- and aging-aware system-technology co-evaluation (STCO) flow to assess parasitic RCs in... » read more The post Comparing A7 CFET and A10 Nanosheet FETs From Parasitics to Chip Reliabil

Continue with the complete report on the publisher’s website.

Read full article at Semiconductor Engineering
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By Semiconductor Engineering

25 September 2026|1 min read
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