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  3. Samsung reportedly shifts sub-10nm DRAM roadmap toward hybrid bonding

DIGITIMES

Samsung reportedly shifts sub-10nm DRAM roadmap toward hybrid bonding

Samsung Electronics has reportedly revised the roadmap for its first sub-10nm DRAM generation, making a wafer-to-wafer hybrid-bonding architecture the baseline for its D0a process while moving its vertical-channel-transistor (VCT) design to a separate D0a-V derivative.

Continue with the complete report on the publisher’s website.

Read full article at DIGITIMES
D

By DIGITIMES

24 September 2026|1 min read
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Semiconductors & Microelectronics
Samsung reportedly shifts sub-10nm DRAM roadmap toward hybrid bonding
Samsung reportedly shifts sub-10nm DRAM roadmap toward hybrid bonding
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