Semiconductor Engineering

Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)

Seoul National University-led researchers published “Resolving the Kay–Dunn limit and the speed–endurance dilemma in ferroelectric Hf0.5Zr0.5O2 for DRAM-class sub-volt capacitors.” Abstract “Ferroelectric hafnium zirconium oxide can increase charge density in scaled capacitors, but its high coercive field limits the low-voltage, high endurance switching required for dynamic random-access memory and embedded ferroelectric memories. Here we show that plasma-engineered... » read more The

By Semiconductor Engineering

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Fast, Sub-Volt HZO Ferroelectric Capacitors For DRAM-Like Memory (SNU)
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